Remained p-GaN effect to turn-off energy loss (Eoff) in p-GaN gate power devices


In p-GaN gate AlGaN/GaN power devices, the p-GaN etching method to outline the gate region is critical to device performance. In some cases, the remained p-GaN within the ungated region will exist as a results of underneath-etching, and can act like a charge reservoir in the p-GaN gate power device. In this reported work, the impact of this remained p-GaN layer is investigated for the primary time. The main result of the thick remained p-GaN on the ungated region is that the increments of turn-off energy loss (Eoff) notwithstanding the similar turn-on energy loss (Eon). This is connected to the opening trapping within the remained p-GaN region which is observed by the modification of turn-off gate voltages.

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