Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor
We investigated the impact of body thickness on the electrical performance of GaSb double-gate ultrathin-body (DG-UTB) MOSFET by examining the band structure of the twelve- ( $sim two$ nm), twenty four- ( $sim four$ nm), 36- ( $sim 6$ nm), and forty eight- ( $sim eight$ nm) atomic-layer (AL) thick GaSb. Two totally different surface orientations, namely, (one hundred) and (11one), were studied. sp3d5s* tight-binding model is used to calculate the band structures of GaSb MOSFET. Ballistic transport was studied using the semiclassical high-of-barrier model with applied self-consistent real-area potential across the body. First, we tend to found that for (a hundred) surface orientation, GaSb DG-UTB FET with body thickness of 24 ALs offered comparatively larger ON-state current for varied gate dielectric materials studied. However, for (111) surface orientation, 12 ALs GaSb DG-UTB FET showed the most effective performance thanks to its reasonably higher injection velocity and bigger electron density. Furthermore, for the FET with a body thickness of forty eight ALs and HfO2 dielectric, it absolutely was observed that the charge occupations shift toward the surface, not like the cases of FETs with thinner body, leading to the formation of inversion charge on the surface. Finally, we tend to compared the ON-state current of GaSb DG-UTB FET with different channel surface orientations and found that (100) surface usually outperforms (11one) surface in terms of ON-state current.
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