PROJECT TITLE :
Fully Integrated D-Band Direct Carrier Quadrature (I/Q) Modulator and Demodulator Circuits in InP DHBT Technology
This paper presents style and characterization of D-band (a hundred and ten–one hundred seventy GHz) monolithic microwave integrated quadrature up- and down-converting mixer circuits with on-chip RF and local oscillator (LO) baluns. The circuits are fabricated in 250-nm indium–phosphide double heterojunction bipolar transistor technology. The mixers require an external LO signal and will be used as direct carrier quadrature modulator and demodulator to implement higher order quadrature amplitude modulation formats. The up-converter encompasses a single-sideband (SSB) conversion gain of vi dB with image and LO suppression of thirty two and twenty seven dBc, respectively. The chip will provide maximum output RF power of two.5 dBm, a third-order output intercept purpose of 4 dBm, and consumes 78-mW dc power. The down-converter exhibits 14-dB SSB conversion gain with 25-dB image rejection ratio, and 11.5-dB SSB noise figure. The chip consumes 74-mW dc power and can deliver maximum output IF power of 4 dBm. Both chips have the identical size with active space of 560 m 440 m including the RF and LO baluns.
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