Mobility Investigations on Strained 30-nm High- $k$ Metal Gate MOSFETs by Geometrical Magnetoresistance Effect PROJECT TITLE :Mobility Investigations on Strained 30-nm High- $k$ Metal Gate MOSFETs by Geometrical Magnetoresistance EffectABSTRACT:In this paper, we have a tendency to present mobility investigations of strained nMOS and pMOS short-channel transistors with dimensions down to 30-nm gate length. Using the geometrical magnetoresistance (MR) result, carrier mobility of electrons and holes in the inversion channel of a recent state-of-the-art CMOS technology is presented from linear to saturation operation conditions. The MR impact permits for a a lot of direct access to the carrier mobility compared with the conventional current/voltage and capacitance/voltage mobility derivation methods, in that series resistance, inversion charge density, and effective channel length are necessary to extract the mobility values of the short-channel devices. In another way, the MR effect will facilitate to disentangle the performance gain of the strained state-of-the art devices to changes in channel mobility or device affiliation, e.g., series resistance effects. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest A Wound Field Switched Flux Machine With Field and Armature Windings Separately Wound in Double Stators A Low-Power Architecture for Punctured Compressed Sensing and Estimation in Wireless Sensor-Nodes
