Uniform, Low-Resistive Ni-Pt Silicide Fabricated by Partial Conversion With Low Metal-Consumption Ratio ABSTRACT:We applied partial conversion (PC) with a low metal-consumption ratio (MCR) as the initial silicidation, fabricating uniform and low-resistive Ni-Pt silicide regardless of the device patterns across a wafer. The key to PC in Ni-Pt silicidation was leaving the Ni-Pt alloy on the silicide after the initial silicidation. This process enriched the Pt of the Ni-Pt silicide because the Pt was supplied from the unconsumed Ni-Pt alloy on the silicide during the initial silicidation. The resistivity of Ni-Pt silicide was as low as that of NiSi at MCRs of less than 80%, suppressing the formation of nickel di-silicide (NiSi2) on the even narrow active line. We concluded that Pt on the silicide/Si interface and the grain boundaries of silicides can restrain Ni diffusion toward the <;110>; direction into the Si substrate, which suppresses the formation of NiSi2. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Study of Bubble Activity in a Megasonic Field Using an Electrochemical Technique Voltage and Temperature-Aware SSTA Using Neural Network Delay Model