Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack


AlN has successfully been applied to passivate the oxide/III–V interface; but, it changes each the metal work perform (WF) and band alignment of the gate-stack and, thus, affects the power consumption of the devices. We tend to found that the AlN layer induces a dipole eV between HfO2 and substrate. The dipole value obtained from capacitance–voltage characteristics performs good agreement with the results of X-ray photoelectron spectroscopic measurements. The effective WF of Ni is found to be 5.fifty five eV, that is larger than its WF in vacuum. The valance band offset and therefore the conduction band offset of HfO2 with AlN/In0.53Ga0.47As are found to be two.eighty two and a pair of.06 eV, respectively.

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