Improved Regrowth Interface of AlGaInAs/InP-Buried-Heterostructure Lasers by In-Situ Thermal Cleaning PROJECT TITLE :Improved Regrowth Interface of AlGaInAs/InP-Buried-Heterostructure Lasers by In-Situ Thermal CleaningABSTRACT:The influence of in-situ thermal cleaning on the regrowth interface quality of 1.3-$mu{rm m}$ wavelength AlGaInAs/InP-buried-heterostructure (BH) lasers grown by organo-metallic vapor-phase epitaxy was investigated. The surface recombination velocity estimated from below threshold electroluminescence measurements was used to quantitatively study regrowth interface quality. The relationship between surface recombination velocity and lasing properties was supported by theory. In this way, we could validate the use of surface recombination velocity as a measure of interface quality. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Calculation of Bit Error Rates in Optical Systems With Silicon Photonic Wires Analysis of Intensity and Frequency Noises in Semiconductor Optical Amplifier