Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Detailed Analysis on the Spectral Response of InP/InGaAs HPTs for Optoelectronic Applications

1 1 1 1 1 Rating 4.89 (45 Votes)

PROJECT TITLE :

Detailed Analysis on the Spectral Response of InP/InGaAs HPTs for Optoelectronic Applications

ABSTRACT:

We analyze an analytical spectral-response model for heterojunction phototransistors (HPTs) in order to understand the behavior of lattice-matched InPZIn0.47Ga0.53As HPTs with changing device and material parameters. The preliminary modeling of the spectral response lead to a good agreement between theoretical and experimental results for incident wavelength radiations at 980, 1310, and 1550 nm. We then performed several simulations in order to determine the individual influences of several parameters, such as the base-layer thickness and the surface-recombination velocity on the responsivity of the device. A decreasing trend for the surface-recombination parameter with increasing wavelengths was observed, and it is attributed to the greater recombination rate for high-energy photons generated near the surface.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Detailed Analysis on the Spectral Response of InP/InGaAs HPTs for Optoelectronic Applications - 4.9 out of 5 based on 45 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...