Detailed Analysis on the Spectral Response of InP/InGaAs HPTs for Optoelectronic Applications PROJECT TITLE :Detailed Analysis on the Spectral Response of InP/InGaAs HPTs for Optoelectronic ApplicationsABSTRACT:We analyze an analytical spectral-response model for heterojunction phototransistors (HPTs) in order to understand the behavior of lattice-matched InPZIn0.47Ga0.53As HPTs with changing device and material parameters. The preliminary modeling of the spectral response lead to a good agreement between theoretical and experimental results for incident wavelength radiations at 980, 1310, and 1550 nm. We then performed several simulations in order to determine the individual influences of several parameters, such as the base-layer thickness and the surface-recombination velocity on the responsivity of the device. A decreasing trend for the surface-recombination parameter with increasing wavelengths was observed, and it is attributed to the greater recombination rate for high-energy photons generated near the surface. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest 1060-nm Ridge Waveguide Lasers Based on Extremely Wide Waveguides for 1.3-W Continuous-Wave Emission Into a Single Mode With FWHM Divergence Angle of Theoretical and Experimental Study on the Intracavity Optical Parametric Oscillator Pumped in a Raman Laser
