Analysis and Design of an E-Band Transformer-Coupled Low-Noise Quadrature VCO in 28-nm CMOS

PROJECT TITLE :

Analysis and Design of an E-Band Transformer-Coupled Low-Noise Quadrature VCO in 28-nm CMOS

ABSTRACT:

This paper presents an E-band quadrature voltage-controlled oscillator implemented in 28-nm CMOS. Two elementary oscillators are coupled by means of gate-to-drain transformers to realize accurate quadrature phases and switched coupled inductors are added for tuning extension. Closed-kind expressions of the oscillation frequency and therefore the tuning extension design parameters are derived. The time-variant nature of the circuit noise to part noise (PN) of the presented topology is investigated, ensuing in easy style guidelines for optimal style. Based on the proposed techniques, the realized prototype is tunable over two bands of almost 5 GHz every separated in frequency, while occupying only 0.031 mm2. The peak measured PN at ten-MHz offset is -117.7 dBc/Hz from a 72.7-GHz carrier and -one hundred ten dBc/Hz from a 88.a pair of-GHz carrier and varies but 3.five dB among each band.

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