Impact of Bias Conditions on Total Ionizing Dose Effects of $^}gamma $ in SiGe HBT

PROJECT TITLE :

Impact of Bias Conditions on Total Ionizing Dose Effects of $^}gamma $ in SiGe HBT

ABSTRACT:

The result of a defend wire, that is a blank conductor buried on top of an insulated metallic cable, on lightning-induced currents on the cable has been studied using the 3-dimensional (three-D) finite-difference time-domain (FDTD) methodology. In the three-D FDTD model, a 1-km-long insulated cable is buried at depth 0.vi m in 1850-Ω·m ground, and a 1-km-long defend wire is installed zero.three m on top of the cable (at the depth 0.3 m from the ground surface). A one-km-long vertical lightning come-stroke channel, attached to a thirty-m-high tower or flat ground, is found twenty five m away from the cable and therefore the shield wire. The validity of this model has been shown by comparing the FDTD-computed lightning-associated currents on the cable and therefore the protect wire with the corresponding measured currents related to rocket-triggered lightning. The FDTD-computed results show that the presence of the defend wire reduces the induced current on the cable and the voltage across the outer insulation layer of the cable, evidently, but the series resistance of the shield wire incorporates a negligible result on this reduction. The presence of thirty-m-high strike object slightly reduces the cable current. The bottom permittivity and the come back-stroke speed have negligible effects on the cable current, however the higher the ground resistivity, the upper is that the cable current. The rise of bonding points between the cable sheath and therefore the shield wire will increase the cable current, however decreases the voltage across the outer insulation layer of the cable.

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