A Superlattice Solar Cell With Enhanced Short-Circuit Current and Minimized Drop in Open-Circuit Voltage


A quantum-well (QW) solar cell including InGaAs wells may be a promising candidate for the purpose of current matching in InGaP/GaAs/Ge tandem solar cells by extending the edge of quantum potency to longer wavelengths. Even though QWs increase short-circuit current by the extended effective band edge, they have a tendency to obstruct carrier transport and degrade the potency of a cell. So, a superlattice (SL) structure has been proposed to forestall the recombination of carriers within of the wells and, additional importantly, to enable carriers to tunnel to a neighboring well, resulting in an efficient carrier transportation in such a photovoltaic device. In this paper, a SL solar cell was implemented with a strain-balancing technique. It exhibited glorious performance: Enhanced photocurrent ( mA/cm$^a pair of$) with minimized drop (0.03 V) in open-circuit voltage. Behind these achievements, substantial contribution of tunneling transport has been confirmed for the SL cell by external quantum potency measurement at seventy seven K.

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