Ga Composition Dictates Macroscopic Photovoltaic and Nanoscopic Electrical Characteristics of Cu(In Ga )Se Thin Films via Grain-Boundary-Type Inversion PROJECT TITLE :Ga Composition Dictates Macroscopic Photovoltaic and Nanoscopic Electrical Characteristics of Cu(In Ga )Se Thin Films via Grain-Boundary-Type InversionABSTRACT:The photovoltaic performance of solar cells, based on a Cu(In $_{1-x}$Ga$_x$ )Se$_2$ (CIGS) absorber layer, is directly correlated with Ga composition. We have used scanning capacitance microscopy and conducting probe atomic force microscopy (CP-AFM) to provide microscopic electrical characterization of CIGS films with different Ga content. We found p- to n-type inversion at grain boundaries of the polycrystalline CIGS film, especially for Ga-poor compositions. The fraction of grain boundaries undergoing inversion dramatically decreased for Ga compositions above x = 0.32, the composition corresponding to a sharp efficiency drop of the complete cells. CP-AFM measurements showed a marked current drop at grain boundaries as the Ga composition rose above x = 0.32. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest A New Technique for Tracking the Global Maximum Power Point of PV Arrays Operating Under Partial-Shading Conditions Thermal Performance of the SunPower Alpha-2 PV Concentrator