Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability PROJECT TITLE :Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell StabilityABSTRACT:During this paper, we have a tendency to present a variability-aware three-D mixed-mode device simulation study of Si gate-all-around (GAA) nanowire MOSFET (NWFET)-primarily based six-T static random access memory (SRAM) bit-cell stability and performance considering metal-gate granularity (MGG) induced intrinsic device random fluctuations and quantum corrected space temperature drift-diffusion transport. The impact of MGG contributed intrinsic variability on Si GAA n- and p-NWFETs-based SRAM cell static noise margins (SNM), write and read delay time are statistically analyzed. Our statistical simulations predict acceptable stability for the Si NWFET vi-T SRAM cell with VDD downscaling up to 0.5 V. The simulation estimated mean hold SNM values follow a lowering trend with VDD downscaling, kind of like the hold SNM experimental information reported in the literature for Si GAA NWFET-primarily based SRAM arrays. We more show a linear variation in statistical variance of hold SNM with gate metal grain size and work function. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Immobilization of Bovine Serum Albumin Upon Multiwall Carbon Nanotube for High Speed Humidity Sensing Application Support for Augmented Reality Simulation Systems: The Effects of Scaffolding on Learning Outcomes and Behavior Patterns