H2O Induced Hump Phenomenon in Capacitance–Voltage Measurements of a-IGZO Thin-Film Transistors


Through using capacitance-voltage (C-V) measurements, the stability of a-IGZO TFTs after applying negative bias stress in different ambient atmospheres was investigated. The hump phenomenon in C-V curve, totally different from that within the vacuum, was observed after applying negative bias stress in the air, which was involved with H2O. In addition, ends up in the oxygen atmosphere slightly modified under negative bias stress. Compared with traditional I-V curves, C-V measurements helped to raised understand the degradation of a-IGZO TFTs. A two-conductive-way model was built to clarify the mechanism of instability.

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