Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes


We have a tendency to gift a study of the optical inhomogeneities and degradation of InGaN-primarily based green laser diodes based on high-resolution cathodoluminescence (CL) investigation of the output sides and inner cross-section of the devices. The results indicate that 1) degradation originates from a diffusion method, that causes an increase in the edge current. a pair of) Nanoscale-level CL points out the circular symmetry of the degraded area, which is wider than the ridge and includes not only the quantum wells however additionally the waveguiding and cladding layers. 3) The yellow luminescence decreases within the degraded region, whereas its intensity increases outside of the degraded region. four) Wavelength fluctuations are found in each quantum wells and waveguides, that are critically analyzed and ascribed to inhomogeneity in indium concentration. Their attainable effect within the filamentation of the laser emission is discussed.

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