PROJECT TITLE :
Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
During this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at two hundred °C on p-sort Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate the electrical characteristics of these AlN films, MIS capacitor structures were fabricated and characterized using current-voltage and high-frequency (1 MHz) capacitance-voltage measurements. The results showed that this transport mechanism under accumulation mode is strongly passionate about the applied electrical field and thickness of the AlN film. Possible conduction mechanisms were analyzed, and the fundamental electrical parameters were extracted and compared for AlN thin films with totally different thicknesses. Compared with seven-nm-thick film, a forty seven-nm-thick AlN film showed a lower effective charge density and threshold voltage together with a better dielectric constant.
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