Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition PROJECT TITLE :Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer DepositionABSTRACT:During this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at two hundred °C on p-sort Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate the electrical characteristics of these AlN films, MIS capacitor structures were fabricated and characterized using current-voltage and high-frequency (1 MHz) capacitance-voltage measurements. The results showed that this transport mechanism under accumulation mode is strongly passionate about the applied electrical field and thickness of the AlN film. Possible conduction mechanisms were analyzed, and the fundamental electrical parameters were extracted and compared for AlN thin films with totally different thicknesses. Compared with seven-nm-thick film, a forty seven-nm-thick AlN film showed a lower effective charge density and threshold voltage together with a better dielectric constant. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Planning Water Resources Allocation Under Multiple Uncertainties Through a Generalized Fuzzy Two-Stage Stochastic Programming Method A Delay-Rational Model of Lossy Multiconductor Transmission Lines With Frequency-Independent Per-Unit-Length Parameters
