A Future Way of Storing Information: Resistive Random Access Memory. PROJECT TITLE :A Future Way of Storing Information: Resistive Random Access Memory.ABSTRACT:Electronic information storage has become one of the major needs of modern societies, and it represents a market of more than US$5 billion [1]. Among all of the existing technologies, flash memory is the most widespread because of its simple structure, high integration, and fast speed [2]. The core cell of this device is based on the charge and discharge of a capacitor using a transistor as a tiny switch [3], but, as the devices are scaled down, this configuration presents some physical limitations [4]. Therefore, new ways for information storage are required, and, among all existing nonvolatile memories, one that has raised major expectations in recent years is resistive random access memory (RRAM) [5]. In this article, we present the working principle and functioning of the most promising RRAM devices for future information storage. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Using the Surface Plasmon Resonance of Au Nanoparticles to Enhance Ultraviolet Response of ZnO Nanorods-Based Schottky-Barrier Photodetectors Nanowire-Based Anisotropic Conductive Film: A Low Temperature, Ultra-fine Pitch Interconnect Solution.
