PROJECT TITLE :

Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

ABSTRACT:

The result of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is studied. A important improvement in photoemission, photocurrent density and spectral response was observed with post-growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from four.nine mA cm-two for as-grown sample to 5.8 mA cm-2. We tend to assign this enhanced performance to the reduced density of inherent purpose defects that was shaped at the quantum dot (QD) and GaAs barrier. Post-growth thermal annealing of QDSCs is demonstrated as a simple route for achieving improved device performance.