PROJECT TITLE :

Photosensing Properties of Pentacene OFETs Based on a Novel PMMA Copolymer Gate Dielectric

ABSTRACT:

In the present work, bottom-gate high-contact organic field impact transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on high of a replacement insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to mix the well-known insulating properties of PMMA with the chance to be efficiently photocured enabling photopatterning-primarily based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices primarily based on commonplace PMMA gate dielectric.