Design and Characterization of a Novel T-Shaped Multi-Axis Piezoresistive Force/Moment Sensor


In this paper, a T-shaped piezoresistive multi-axis force sensor fabricated by the semiconductor technology is developed. The sensor’s style, simulation, piezoresistors arrangement, and characterization are mentioned. Fourteen piezoresistors are organized on silicon beams and used as independent strain gauges. The 3 parts ( $F_x$ , $F_y$ , and $F_z$ ) of an applied force and 2 elements of an instant ( $M_x$ , and $M_y$ ) will be simultaneously resolved from the piezoresistance changes induced by the stresses. The sensor was first characterized employing a gravity mass reference take a look at bench. The results show the properties of linearity (0.ninety nine), sensitivity (force: 1.5 mN; moment: zero.003 Nmm), and little crosstalk ( $approx five$ %) between the dominant force part and different parts. The fabricated sensor was additionally verified against a industrial six degree of freedom load cell, and located to perform reliably with high repeatability, low hysteresis (zero.5%), and good dynamic response (four ms).

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