Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes PROJECT TITLE :Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting DiodesABSTRACT:This letter reports the first experimental demonstration of your time-dependent breakdown in GaN-primarily based lightweight-emitting diodes (LEDs); based on a variety of constant voltage stress tests, meted out below the breakdown limit of the devices, we have a tendency to show that: one) when submitted to reverse-bias stress, the LEDs show a gradual increase in current, well correlated with a rise in the breakdown luminescence signal; a pair of) for sufficiently long stress times, the LEDs will reach a catastrophic (sudden) breakdown, that results in the failure of the devices; 3) the breakdown method is time-dependent and also the time to failure (TTF) has an exponential dependence on stress voltage; and 4) TTF is Weibull distributed. The results presented inside this letter demonstrate that the GaN-based heterostructures will show a TDDB-like behavior, and can be useful for the interpretation of the degradation knowledge of LEDs and HEMTs. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest A Sub-150- BEOL-Embedded CMOS-MEMS Oscillator With a 138-dB Ultra-Low-Noise TIA 1-Bit Reconfigurable Unit Cell for Ka-Band Transmitarrays