A Sub-150- BEOL-Embedded CMOS-MEMS Oscillator With a 138-dB Ultra-Low-Noise TIA

PROJECT TITLE :

A Sub-150- BEOL-Embedded CMOS-MEMS Oscillator With a 138-dB Ultra-Low-Noise TIA

ABSTRACT:

This letter presents the look of a coffee power, low phase noise monolithic oscillator with a back-end-of-line-embedded CMOS-MEMS resonator. The proposed CMOS-MEMS oscillator consists of a double-ended tuning fork resonator and a high gain (>138 dB $Omega )$ ultra-low input-referred current noise ( $<25rm fA/sqrt rm Hz ) $ integrator-differentiator transimpedance amplifier (TIA) with sub-one hundred fifty- $mu textW$ power consumption. The 1.2-MHz CMOS-MEMS oscillator prototype shows the section noise better than −a hundred and twenty dBc/Hz at 1-kHz offset and −twelvetwo dBc/Hz at ten-kHz offset with moderate dc-bias ( $V_P = twenty two$ V). The proposed oscillator can be operated with reduced MEMS dc bias ( $V_P < seven$ V) and TIA power offer ( $V_rm DD < 1.3$ V, sixty five $mu textW$ ) while maintaining satisfactory performance. The frequency–power-normalized oscillator section noise figure-of-advantage (will be outlined later) of one hundred ninety dB is achieved at one-kHz offset with a resonator $Q$ of 190zero, that is comparable with the state-of-the-art using bulk-mode resonators possessing $Q > one hundred$ k.

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