An Analytic Surface-Field-Based Quasi-Atomistic Model for Nanowire MOSFETs With Random Dopant Fluctuations


For the first time, an analytic surface-field-primarily based model for nanowire MOSFETs with random dopant fluctuations (RDF) is reported. During this model, the depletion charge due to the discrete dopant distribution is described by the Dirac functions, while the mobile charge keeps its continuous type. By introducing two new variables, the discrete one-D Poisson’s equation is transformed into a straightforward algebraic equation to correlate the surface potential with the sphere (because of the inversion charge). While not solving the potential distribution, the drain current can be calculated from the Pao–Sah integral using the oxide-interface boundary condition. This model is shown to be additional correct in predicting the RDF effects than the continual TCAD simulations for all the operating regions. We have a tendency to also discuss the RDF-incorporated short-channel effects by solving the discrete 2-D Poisson’s equation within the subthreshold regime.

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