Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers ABSTRACT:The authors report on the formation of highly reliable Ti/Al-based ohmic contacts to N-face n-GaN for high-performance vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers. The Ti(Ga) solid solution layer is used to minimize the outdiffusion of Ga atoms from the n-GaN surface region. Unlike the Ti/Al contacts, the Ti(Ga)/Ti/Al and Ti(Ga)/TiN/Al samples exhibit ohmic behavior with contact resistivities of 3.9 – 4.8 × 10-4 Ωcm2 after annealing at 250 °C. It was further shown that unlike the Ti(Ga)/TiN/Al samples, the Ti/Al and the Ti(Ga)/Ti/Al samples are largely electrically degraded when annealed at 300 °C in an oven. Based on x-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBE