Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surface ABSTRACT:Multilayer and single layer GaSb/GaAs(001) quantum dot structures were grown on an Sb-terminated (2 × 8) surface reconstruction and compared to those grown on an As-terminated (2 × 4) surface reconstruction. Uncapped quantum dots grown on the (2 × 8) surface were approximately 25% smaller in diameter and had a larger width/height aspect ratio. Quantum dots grown on both surfaces were defect free at the quantum dot/spacer layer interface. The dots did not appear to be fully compact when imaged by transmission electron microscopy, which may be due to dissolution and/or quantum ring formation. The quantum dot photoluminescence peak for dots grown on the (2 × 8) surface was brighter but at the same energy as that of dots grown on the (2 × 4) surface. This was likely the result of a higher areal density of dots on the (2 × 8) surface and a lower tendency for them to intermix during capping, resulting in dots of similar size for both samples after capping. Quantum dots grown on the (2 × 8) surface also displayed greater morphological stability when quenched in the absence of Sb. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates