Optimization of ICPCVD Amorphous Silicon for Optical MEMS Applications


In this paper, we have a tendency to present the optimization of optical and mechanical properties of inductively coupled plasma chemical vapor deposited (ICPCVD) amorphous silicon thin films for fabrication of high-quality optical microelectromechanical systems-based mostly devices operating from visible to short-wave infrared wavelengths (450–300zero nm). Our results indicate that, at comparatively high deposition temperatures for plasma CVD, a decrease in the ICP power results in films with lower tensile stress, higher refractive index, and lower extinction coefficient. We have a tendency to show that hydrogen concentration alone is not a sufficient parameter for controlling optical and mechanical quality of the films. In explicit, each the hydrogen concentration and also the hydrogen-silicon bonding nature together play a important role in determining the optical and also the mechanical quality of the silicon thin films. As an indication vehicle, three layer silicon-silicon oxide-silicon-based distributed Bragg reflectors were fabricated for the visible (500–70zero nm), near infrared (70zero–1000 nm), and short-wave infrared (2000–300zero nm) wavelength ranges using an optimized silicon fabrication recipe. The measured optical transmission spectra show shut to 90% peak reflectivity. Finally, stress optimization was evaluated by fabricating $270-mu mathrm m$ diameter circular suspended silicon membranes, that demonstrate a flatness variation on the order of $

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