Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs PROJECT TITLE :Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTsABSTRACT:Radiation tolerance of AlGaN/GaN high-electron mobility transistors (HEMTs) is studied with 2-MeV protons, up to a fluence of $six times 10^14$ H+/cm2 (concerning 200 times of typical Si MOSFET rating). The increase in dynamic ON-resistance ( $R_textitONDYN)$ when radiation is observed to be abundant additional severe than that of static ON-resistance. Radiation-induced donorlike traps located near the two-dimensional electron gas lure electrons, which is responsible for the phenomenon. Compared with the devices passivated by typical plasma-enhanced chemical vapor deposition (PECVD) SiN, GaN HEMTs with ten nm of in situ SiN before the PECVD SiN step demonstrate a lot of less increase in $R_textitONDYN$ from 2300% to only three hundred%. The in situ SiN is believed to scale back the method injury by PECVD, improving radiation tolerance. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Non-local feature back-projection for image super-resolution Failure Analysis of Nitrogen-Doped Ge2Sb2Te5 Phase Change Memory
