Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions

PROJECT TITLE :

Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions

ABSTRACT:

We tend to introduce a magnetoelectric junction driven by voltage-controlled magnetic anisotropy (VCMA-MEJ) as a building block for a vary of low-power memory applications. We tend to present and discuss specifically 2 applications, magnetoelectric random access memory (MeRAM) and ternary content-addressable memory (TCAM). The MEJ differs from a magnetic tunnel junction (MTJ) in that electric field is used to induce switching in lieu of considerable current flow in MTJ. Electric field control of magnetism can dramatically enhance the performance of magnetic memory devices in terms of switching energy efficiency and switching speed. The development of such an energy-efficient and ultrafast memory includes a potential to alter the paradigm of a hierarchical memory system in the traditional pc design. By combining speed, low power, and high density, electrical-field-controlled magnetic memory merges features of multiple separate memory technologies employed in nowadays's memory hierarchy. The performance of a VCMA-MEJs-based MeRAM, especially in the case of 1 access transistor related to one MEJ (1T-1R) structure, is evaluated by comparing it with that of part-change RAM, resistive RAM, and spin transfer torque RAM. MeRAM will achieve ultrafast switching (

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