On Temperature Dependency of Delay for Local,Intermediate, and Repeater Inserted Global Copper Interconnects


Cryogenic technologies not only improve the performance of interconnects however also the performance of transistors and consequently drivers and repeaters. Although in cryogenically cooled integrated circuits the local temperature of interconnects and transistors could be as low as fifty K, it could easily reach to 600 K in high-temperature chips. In this temporary, we have a tendency to investigated the impact of temperature on the delay of native, intermediate, unit-repeater-inserted (URI), and cascaded repeater-inserted (CRI) global copper interconnects for minimum technology node with accessible transistor model (thirty two-nm technology). Our results show that temperature variation of driver resistance could change the delay of native and intermediate interconnects, respectively, down to −thirty three% and −twenty eight% at low temperatures, and up to +240% and 232% at high temperatures relative to the area temperature delay. Moreover, while the contribution of temperature dependency of interconnect is negligible for local and intermediate layers, the temperature dependency of repeater and interconnect could vary the delay of URI and CRI global layer interconnect down to −twenty three% and −thirty eight% at low temperatures, and up to +116% and +two hundred% at high temperatures, respectively.

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