A New Quasi-3-D Compact Threshold Voltage Model for Pi-Gate (ΠG) MOSFETs With the Interface Trapped Charges PROJECT TITLE :A New Quasi-3-D Compact Threshold Voltage Model for Pi-Gate (ΠG) MOSFETs With the Interface Trapped ChargesABSTRACT:With the results of equivalent oxide charges on the flat-band voltage, a new quasi-3-dimensional (quasi-3-D) compact threshold voltage model is presented for the pi-gate (ΠG) MOSFETs with the interface trapped charges primarily based on the quasi-3-D scaling equation that accounts for equivalent range of gates and virtual back gate effects induced by the normalized gate extension depth in the buried oxide. The model reveals that a thin gate oxide will effectively scale back the threshold voltage degradation caused by the trapped charges. Opposite to the thin gate oxide, a thick silicon is needed to alleviate the threshold voltage shift resulted from the negative trapped charges. For the short-channel behavior, the device with negative/positive trapped charges will decrease/increase the brink voltage roll-off caused by the short-channel effects. Because of its computational efficiency and easy formula, the model will be easily used to explore the edge behavior for the charges trapping ΠG MOSFETs. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Analytical Calculation of Synchronous Reactances of Homopolar Inductor Alternator Traffic Flow Prediction With Big Data: A Deep Learning Approach