PROJECT TITLE :

A High-Gain Power-Efficient Wideband V-Band LNA in 0.18- $mutext$ SiGe BiCMOS

ABSTRACT:

This paper presents a high-gain power-efficient wideband V-band low noise amplifier (LNA) realized in 0.eighteen- SiGe BiCMOS process. An effective wideband gain shaping technique with gain enhancement below low power consumption is employed, where the first and 2nd inter-stage matching (ISM) network are designed for higher conjugate matching around the lower and higher three dB cutoff frequency ends, respectively, without yield the gains at the other frequency ends for each ISM network. The developed LNA achieves the peak measured gain of 32.5 dB at sixty one GHz and over twenty nine.5 dB gain across the 3 dB bandwidth from forty three to 67 GHz whereas consuming only eleven.7 mW at one.8 V provide voltage. The measured average noise figure and cluster delay variation are 6 dB and but twenty eight.three ps over the complete bandwidth, respectively.