Prediction of NBTI Degradation in Dynamic Voltage Frequency Scaling Operations

PROJECT TITLE :

Prediction of NBTI Degradation in Dynamic Voltage Frequency Scaling Operations

ABSTRACT:

In the nano-CMOS era, negative bias temperature instability (NBTI) has become one among the foremost limiting factors of circuit lifetime. Degradation caused by NBTI effect is profoundly plagued by today's complicated circuit operations, such as dynamic voltage frequency scaling, in which power supply and frequency vary with time elapsing. Therefore, accurate NBTI prediction is essential to CMOS circuit style for reliability. To realize this target, this paper 1) revises the closed-kind reaction-diffusion and trapping/detrapping models to boost their aging prediction, under the case when offer voltage, frequency, and duty issue consecutively modification; 2) proposes an economical calculation framework for our revised closed-form models to supply accurate aging prediction over a long time span; 3) validates our revised models and calculation strategies by using the parameters extracted from a sixty five-nm CMOS method. Compared with the previous closed-type models, our revised models and the connected calculation ways are ready to supply convincing aging predictions. In the longer term, the revised models and therefore the calculation strategies will be introduced into the exploration on circuit design for reliability.

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