Fatigue Properties of ITO and Graphene on Flexible Substrates


The primary determination of the fatigue behavior of Graphene and Indium Tin Oxide (ITO) as interconnect materials for electronic elements on flexible substrates is reported. ITO and Graphene samples were fabricated on Silicon Nitride (Si 3N four)/Polyethylene Naphthalate (PEN) substrates. The results of the in-depth characterization of Graphene are reported primarily based on atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM). The fatigue characteristics of ITO were determined at stress amplitudes starting from 400 to 600 MPa. The fatigue characteristics of Graphene were determined at stress amplitudes ranging from 40 to eighty GPa. The S-N curves showed that Graphene's endurance limit is 40 GPa, whereas ITO showed an endurance limit of 400 MPa.

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