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A 1 TB/s 1 pJ/b 6.4 QDR Inductive-Coupling Interface Between 65-nm CMOS Logic and Emulated 100-nm DRAM
PROJECT TITLE :
A 1 TB/s 1 pJ/b 6.4 QDR Inductive-Coupling Interface Between 65-nm CMOS Logic and Emulated 100-nm DRAM
ABSTRACT:
1 TB/s one pJ/b six.4 $rm mm^2/rm TB/s$ inductive-coupling interface between 65-nm complementary metal–oxide–semiconductor (CMOS) logic and emulated one hundred-nm dynamic random access memory (DRAM) is developed. $rm BER
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