Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors


Metal-insulator-insulator-metal (MIIM) capacitors with bilayers of Al2O3 and SiO2 are deposited at two hundred °C via plasma enhanced atomic layer deposition. Using the cancelling result between the positive quadratic voltage coefficient of capacitance (αVCC) of Al2O3 and therefore the negative αVCC of SiO2, devices are created that simultaneously meet the International Technology Roadmap for Semiconductors 20twenty projections for capacitance density, leakage current density, and voltage nonlinearity. Optimized bilayer Al2O3/SiO2 MIIM capacitors exhibit a capacitance density of 10.1 fF/μm2, a leakage current density of six.8 nA/cm2 at one V, and a minimized αVCC of -20 ppm/V2.

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