The Effect of Voltage-Dependent Charge-Removing Mechanism on the Optical Modulation Bandwidths of Light-Emitting Transistors


The optical modulation bandwidths of sunshine-emitting transistors (LETs) at different bias conditions are measured and compared to analyze the influence of the voltage-dependent charge-removing mechanism inside the active region. The modulation bandwidth dramatically increases from 338 MHz to 1.338 GHz when the transistor is operated from a saturation mode to a forward-active mode underneath a constant current of 2 mA. We tend to show that gigahertz spontaneous bandwidths of LETs rely not only on the input currents, that is almost like light-weight-emitting diodes, however also are strongly connected to the voltages of a base–collector junction. By varying the reverse bias of the collector terminal, different charge distribution profiles will be established among the active region to perform distinct optical modulation bandwidths.

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