The Effect of Voltage-Dependent Charge-Removing Mechanism on the Optical Modulation Bandwidths of Light-Emitting Transistors PROJECT TITLE :The Effect of Voltage-Dependent Charge-Removing Mechanism on the Optical Modulation Bandwidths of Light-Emitting TransistorsABSTRACT:The optical modulation bandwidths of sunshine-emitting transistors (LETs) at different bias conditions are measured and compared to analyze the influence of the voltage-dependent charge-removing mechanism inside the active region. The modulation bandwidth dramatically increases from 338 MHz to 1.338 GHz when the transistor is operated from a saturation mode to a forward-active mode underneath a constant current of 2 mA. We tend to show that gigahertz spontaneous bandwidths of LETs rely not only on the input currents, that is almost like light-weight-emitting diodes, however also are strongly connected to the voltages of a base–collector junction. By varying the reverse bias of the collector terminal, different charge distribution profiles will be established among the active region to perform distinct optical modulation bandwidths. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest A Distributed Positioning System Based on a Predictive Fingerprinting Method Enabling Sub-Metric Precision in IEEE 802.11 Networks Physical Insights on the Ambiguous Metal–Graphene Interface and Proposal for Improved Contact Resistance