Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOSFET Devices PROJECT TITLE :Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOSFET DevicesABSTRACT:During this paper, we tend to model the geometric component of a charge-pumping (CP) technique. Base on this proposed model, we have a tendency to have established an analytic equation for charge-pumping current. This equation appears to be a universal one since it's in agreement with CP experimental knowledge of various technologies devices. Instead of the classical considerations concerning a parasitic nature of the geometric component, during this paper, we tend to have demonstrated that it can be used to estimate the negative-bias temperature-instability-induced mobility degradation using the CP-based mostly strategies like on-the-fly interface trap. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest RC-Embedded LDMOS-SCR With High Holding Current for High-Voltage I/O ESD Protection Navigating a mobile social network