Effects of Stress and Electromigration on Microstructural Evolution in Microbumps of Three-Dimensional Integrated Circuits PROJECT TITLE :Effects of Stress and Electromigration on Microstructural Evolution in Microbumps of Three-Dimensional Integrated CircuitsABSTRACT:Due to geometric scaling, the heterogeneous and anisotropic microstructures present in through-silicon vias and microbumps must be considered in the stress management of 3-D integrated circuits. In this paper, a phase field model is developed to investigate the effects of stress and electromigration on microstructural evolution in a Cu/Sn-microbump/Cu structure at 150 °C. External compressive stress is observed to accelerate the growth of Cu3Sn grains and cause the separation of continuous interfacial Cu6Sn5 grains by β-Sn grains, whereas tensile stress promotes the growth of Cu6Sn5 grains and the formation of a continuous Cu6Sn5 layer. The roughness of the β-Sn-Cu6Sn5 interface under compressive stress is greater than that under tensile stress. The morphological evolution of the β-Sn grains is also affected by stress. An external shear or compressive stress favors the growth of the β-Sn grains with their c-axis particular to the V-direction. Furthermore, the interdiffusion flux driven by electromigration increases the roughness of the interfacial Cu6Sn5 grains at the cathode. The strain caused by electromigration results in larger β-Sn grains, enabling faster interdiffusion along the current direction. The preferential growth of the β-Sn grains under stress or electromigration decreases the shear modulus of microbumps. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Filter Capacitor Minimization in a Flyback LED Driver Considering Input Current Harmonics and Light Flicker Characteristics Nb-Doped $hbox_hbox_ $ as Charge-Trapping Layer for Nonvolatile Memory Applications