PROJECT TITLE :
Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test
Most classical approaches of single event impact rate prediction are primarily based on the oblong parallelepiped model of sensitive volume. However it's not clear concerning the number of sensitive volume within the device when predicting the in-flight single event latchup rate. As for memory device, there are two empirical practices to house the latchup sensitive volume range: one assumes that there's only one sensitive volume in the entire device; another assumes that there are as much sensitive volumes as the amount of memory cells. The latchup sensitive volume variety of a 4M-bits SRAM is determined as 63360 using pulsed laser mapping test in this work first. Based mostly on the 2 assumed and measured sensitive volume number, the one event latchup rates of the device are calculated and compared. The results show that pulsed laser may be a robust tool to get the important sensitive volume variety within the device, that is significant for single event latchup rate prediction. The latchup rate will be either overestimated or underestimated with the belief of the sensitive volume number collectively or as much as the quantity of memory cells.
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