On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology


Large-signal ( $P_rm 1,dB$ ) and small-signal (OIP3) radio frequency (RF) linearities of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) fabricated during a new fourth-generation 90-nm SiGe BiCMOS technology operating at cryogenic temperatures are investigated. The SiGe BiCMOS process technology has an $f_T$ / $f_rm max$ of 300/350 GHz. SiGe HBTs with two different layout configurations, collector-base-emitter (CBE) and CBE-base-collector (CBEBC), were characterised over temperature. Each dc and ac figures-of-advantage are presented to aid in understanding the linearity, and to supply an overall performance comparison between the two layout configurations. The extracted peak $f_T$ / $f_rm max$ for CBE and CBEBC at seventy eight K are 387/350 and 420/410 GHz, respectively. The $P_rm 1,dB$ and OIP3 linearity metrics for each configurations are comparable. Source- and load-pull measurements were performed at each temperature at 8 and eighteen GHz, with the devices biased at a $J_C$ of eighteen mA/ $mu textm^2$ . Two-tone measurements over bias were additionally performed at three hundred and 78 K with fifty- $Omega $ terminations for the supply and load impedances. The 50 $Omega $ results follow an analogous response to the source- and load-pull measurements at three hundred an- 78 K, and demonstrate that the tiny-signal linearity of the SiGe HBTs is not adversely impacted by operation at cryogenic temperatures. The CBEBC configuration demonstrated the most consistent RF linearity performance at cryogenic temperature out of the two layout choices.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Cryogenic Yb:YAG Laser Pumped by VBG-Stabilized Narrowband Laser Diode at 969 nmABSTRACT:We have a tendency to present the laser performance of Yb:YAG at completely different cryogenic temperatures pumped by a volume
PROJECT TITLE :Realization of Optical Power Scale Based on Cryogenic Radiometry and Trap DetectorsABSTRACT:We report the belief of the Brazilian optical power scale based mostly on cryogenic radiometry. The electrical-substitution
PROJECT TITLE :Magnetic Shielding Characteristics of Second Generation High Temperature Superconductors at Variable Temperatures Obtained by Cryogenic Helium Gas CirculationABSTRACT:Magnetic shielding characteristics of 40 mm
PROJECT TITLE :A Study on the Measurement of Volume and Surface Electrical Conductivity of Cryogenic Insulants for DC HTS EquipmentABSTRACT:For the insulation design of dc high-temperature superconducting (HTS) equipment, dc electric
PROJECT TITLE : Security Analysis of Handover Key Management in 4G LTESAE Networks - 2014 ABSTRACT: The goal of 3GPP Long Term Evolution/System Architecture Evolution (LTE/SAE) is to move mobile cellular wireless technology

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry