Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs PROJECT TITLE :Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTsABSTRACT:In this transient, traps-related dispersion phenomena are investigated on GaN/AlGaN MOS-high-electron mobility transistors. Pulsed – characteristics and low-frequency-noise measurements are the characterization vehicles used to urge an immediate insight of the device lure-states. By considering a set of 10 samples, device-to-device fluctuation parameters extracted from entice-related measurements (one/ noise and gate bias instability) are systematically compared with standard electrical parameters (threshold voltage and ON-current). Two separate trends are identified and ascribed to two completely different trap families. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Fuzzy-Model-Based Reliable Static Output Feedback Control of Nonlinear Hyperbolic PDE Systems Wearable Camera- and Accelerometer-Based Fall Detection on Portable Devices
