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Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs

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PROJECT TITLE :

Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs

ABSTRACT:

In this transient, traps-related dispersion phenomena are investigated on GaN/AlGaN MOS-high-electron mobility transistors. Pulsed – characteristics and low-frequency-noise measurements are the characterization vehicles used to urge an immediate insight of the device lure-states. By considering a set of 10 samples, device-to-device fluctuation parameters extracted from entice-related measurements (one/ noise and gate bias instability) are systematically compared with standard electrical parameters (threshold voltage and ON-current). Two separate trends are identified and ascribed to two completely different trap families.


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Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs - 4.8 out of 5 based on 72 votes

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