Design of Robust SRAM Cells Against Single-Event Multiple Effects for Nanometer Technologies


As technology size scales down toward lower 2-digit nanometer dimensions, sensitivity of CMOS circuits to radiation effects will increase. Static random access memory cells (SRAMs) that are largely utilized as high-performance and high-density memory cells are at risk of radiation-induced single-event upsets. So, planning reliable SRAM cells has invariably been a serious challenge. In this paper, we propose 2 novel SRAM cells, particularly, RHD11 and RHD13, that offer more engaging options than their latest proposed counterparts. Simulation results show that our proposed SRAM cells as compared with some state-of-the-art designs have significantly higher robustness against single-event multiple effects. Moreover, they provide a sensible area overhead advantage so that our proposed RHD1one SRAM cell has nineteen.nine% smaller space than the outstanding dual-interlocked cell. The simulation results and analyses show that our proposed SRAM cells, notably the proposed RHD13, have a substantial lower failure chance among the thought-about recent radiation-hardened SRAM cells.

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