Effects of Chemical Treatments on CdZnTe X-Ray and Gamma-Ray Detectors

PROJECT TITLE :

Effects of Chemical Treatments on CdZnTe X-Ray and Gamma-Ray Detectors

ABSTRACT:

Area-temperature semiconductor detectors, like cadmium zinc telluride (CdZnTe), typically are subjected to surface harm during fabrication, so reducing their performance in detecting X-rays and gamma-rays. During this study, we compared two surface-passivation chemical solutions: Ammonium fluoride in hydrogen peroxide ( ) and potassium hydroxide in hydrogen peroxide (0.1 g of KOH + 10 ml of thirtypercent ). X-ray photoelectron spectroscopic analysis showed that the -based mostly resolution is more effective at changing Te species on the CdZnTe surfaces into a a lot of stable layer, attaining values of 4.90 and five.34 for the and peak-height ratios respectively, compared to the KOH-primarily based answer with 1.twenty five and one.nineteen, respectively. The current-voltage measurements showed a rise in the majority leakage current for freshly passivated samples compared to those of mechanically polished samples. But, at intervals a period of about 3 to 14 days, their leakage currents reduced to values within the vary of the mechanically polished samples. The resistivity of the CdZnTe samples is on the order of . The -based mostly chemical contributed less to the - eakage current. Its leakage current at 60 V is six.3 times that of the mechanically polished sample, compared to thirty.five for the sample passivated with the KOH-based resolution. Analysis of the 59.5-keV peak of Am-241 showed that the sample passivated with the -based answer incorporates a higher energy resolution compared to the one passivated with the KOH-based solution.

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