PROJECT TITLE :

Wide-band high-efficiency Ku-band power amplifier

ABSTRACT:

A 37 dBm power amplifier (PA) is intended on a zero.25 μm optical T-gate pseudomorphic high electron mobility transistor (pHEMT) technology. The design of this two-stage PA along with a step-by-step design procedure is presented during this paper. This methodology will be used for style of PA in several technologies and frequencies. The PA delivers 5 W output power over the frequency band of 13-19 GHz. It shows average power-added efficiency of 37p.c and massive signal gain of fifteen dB in measurements that is in line with simulation results. The output power and efficiency of the realised amplifier reach maximums of 37.6 dBm and forty fivepercent, respectively. Considering output power, bandwidth, chip area and potency, this PA exhibits competitive performance compared to the reported PAs.