Improved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications PROJECT TITLE :Improved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory ApplicationsABSTRACT:The results of Al doping on the charge-trapping characteristics of ZrO2 are investigated based mostly on Al/Al2O3/Al-doped ZrO2/SiO2/Si structure. XRD and XPS show that the crystallization of ZrO2 and also the formation of silicate interlayer at the ZrO2/SiO2 interface are effectively suppressed by Al incorporation, so resulting in better electrical performance with larger memory window and higher retention for the memory device with Al-doped ZrO2 because the charge-trapping layer (CTL) than the one with pure ZrO2. But, excessive Al doping in ZrO2 severely reduces the dielectric constant and electron traps of the CTL, thus resulting in a lot of lower program speed for the device. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Synthesis of Sparse Dynamic Structures via Semidefinite Programming Energy-optimal coverage path planning on topographic map for environment survey with unmanned aerial vehicles