Strain Dependence of Critical Fields—Studied on Piezoelectric Substrates PROJECT TITLE :Strain Dependence of Critical Fields—Studied on Piezoelectric SubstratesABSTRACT:$hboxLa_kern-.5pt1kern-.5pt.kern-.5pt85kern-.5pthboxSr_kern-.5pt 0kern-.5pt.kern-.5pt15kern-.5pthboxCuO_kern-.5pt4$, $hboxBaFe_kern-.5pt1kern-.5pt.kern-.5pt8kern-.5pthboxCo_kern-.5pt 0kern-.5pt.kern-.5pt2kern-.5pthboxAs_kern-.5pt2$ and $hboxFeSe_kern-.5pt0kern-.5pt.kern-.5pt5kern-.5pthboxTe_kern-.5pt0.5$ thin films have been prepared on piezoelectric (001) $hboxPb(hboxMg_1/3hboxNb_2/3)_0.72hboxTi_0.28hboxO_3$ substrates. By the employment of the inverse piezoelectric result, biaxial strain was induced into the films by applying an electric field to the sample. The strain sensitivity of the higher essential field and of the irreversibility line made up our minds by the analysis of the resistive transition. A biaxial compression in the order of zero.02% leads to a shift of those fields. A consistent description of the sphere dependence is possible taking under consideration a strain dependent transition temperature. No influence of the strain state on the anisotropy of the higher crucial field was found in initial approximation. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest E-CARP: An Energy Efficient Routing Protocol for UWSNs in the Internet of Underwater Things Ripple Eliminator to Smooth DC-Bus Voltage and Reduce the Total Capacitance Required