Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO4 PROJECT TITLE :Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO4ABSTRACT:Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO4 (CAAC IGZO) thin films were quantified using X-ray diffraction techniques. Above 190 °C, nanocrystalline films with an X-ray peak at 2θ = 30° (009 planes) developed with increasing c-axis normal texturing up to 310 °C. Under optimal conditions (310 °C, 10% O2), films exhibited a c-axis texture full-width half-maximum of 20°. Cross-sectional high-resolution transmission electron microscopy confirmed these results, showing alignment variation of ±9° over a 15 × 15 nm field of view and indicating formation of much larger aligned domains than previously reported. At higher deposition temperatures, c-axis alignment was gradually lost as polycrystalline films developed. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Development and Analysis of an Electrically Activated Sucker for Handling Workpieces With Rough and Uneven Surfaces Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy