High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors


For several decades, silicon (Si) has been the primary semiconductor selection for Power Electronic devices. During this time, the event and fabrication of Si devices has been optimized, which, together with the big abundance of material, has resulted in high producing capability and extremely low prices. But, Si is approaching its limits in power conversion [one], [2]; improved potency, reduced size, and lower overall system value can currently be achieved by replacing Si devices with wide-bandgap (WBG) semiconductors [one]?[three].

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