Time-of-Flight Measurements on TlBr Detectors


Carrier transport properties of TlBr crystals grown using the Bridgman methodology were investigated by the time-of-flight technique. The electron and hole mobilities were measured as twenty - 27 cm2 /Vs and 1.0 - cm2/Vs respectively at room temperature. The temperature dependence of the electron mobility will increase with decreasing temperature as approximated by a well-known empirical formula reflecting the reciprocal of the LO-phonon density.

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