PROJECT TITLE :

Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric

ABSTRACT:

Plasma nitridation is used for nitrogen incorporation in Ga2O3(Gd2O3) (GGO) as interfacial passivation layer for an InGaAs metal–oxide–semiconductor capacitor with a HfTiON gate dielectric. The nitrided GGO (GGON) on InGaAs will improve the interface quality with a coffee interface-state density at midgap ( $one.0times 10^mathrm mathbf 12$ cm $^mathrm mathbf -2$ eV $^mathrm mathbf -1)$ , and lead to sensible electrical properties for the device, e.g., low gate leakage current ( $8.5times ten^mathrm mathbf -6$ A/cm $^mathrm mathbf 2$ at $V_g = 1$ V), tiny capacitance equivalent thickness (one.sixty nm), and large equivalent dielectric constant (24.9). The mechanisms concerned lie in the actual fact that the GGON interlayer will effectively suppress the formation of the interfacial In/Ga/As oxides and take away excess As atoms on the InGaAs surface, so unpinning the Femi level at the GGON/InGaAs interface and improving the interface quality and electrical properties of the device.